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MJ21193

SavantIC
Part Number MJ21193
Manufacturer SavantIC
Description SILICON POWER TRANSISTOR
Published May 24, 2009
Detailed Description SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJ21193 www.datasheet4u.com DESCRIPTION ...
Datasheet PDF File MJ21193 PDF File

MJ21193
MJ21193

Overview
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJ21193 www.
datasheet4u.
com DESCRIPTION ·With TO-3 package ·Complement to type MJ21194 ·Excellent gain linearity APPLICATIONS ·Designed for high power audio output,disk head positioners and linear applications PINNING(see Fig.
2) PIN 1 2 3 Base Emitter Collector Fig.
1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector MAX -400 -250 -5 -16 -30 -5 250 -65~200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 0.
7 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN www.
datasheet4u.
com MJ21193 SYMBOL TYP.
MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-100mA ;IB=0 -250 V VCE(sat)-1 VCE(sat)-2 VBE(ON) Collector-emitter saturation voltage IC=-8A; IB=-0.
8A -1.
4 V Collector-emitter saturation voltage IC=-16A; IB=-3.
2A -4.
0 V Base-emitter on voltage IC=-8A ; VCE=-5V -2.
2 V ICEX Collector cut-off current VCE=-250V; VBE(off)=-1.
5V VCE=-200V; IB=0 -100 µA ICEO Collector cut-off current -100 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 µA hFE-1 DC current gain IC=-8A ; VCE=-5V 25 75 hFE-2 DC current gain IC=-16A ; VCE=-5V 8 fT Transition frequency IC=-1A ; VCE=-10V,f=1MHz 4 MHz COB Collector output capacitance Second breakdown current with base forward biased f=1MHz;VCB=-10V,IE=0 VCE=-50V;t=1s(non-repetitive) VCE=-80V;t=1s(non-repetitive) -5.
0 -2.
5 500 pF Is/b A 2 SavantIC Semiconductor Product Specification Silicon PNP Po...


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