isc Silicon
NPN Darlington Power
Transistor
MJH11012
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= 60V(Min.
) ·High DC Current Gain-
: hFE= 1000(Min.
)@IC= 20A ·Low Collector Saturation Voltage-
: VCE (sat)= 3.
0V(Max.
)@ IC= 20A ·Complement to the
PNP MJ11011 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continunous
30
A
ICM
Collector ...