DatasheetsPDF.com

MJH11018

Inchange Semiconductor
Part Number MJH11018
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Aug 10, 2016
Detailed Description isc Silicon NPN Darlington Power Transistor MJH11018 DESCRIPTION ·High DC Current Gain- : hFE = 400(Min)@ IC= 10A ·Col...
Datasheet PDF File MJH11018 PDF File

MJH11018
MJH11018


Overview
isc Silicon NPN Darlington Power Transistor MJH11018 DESCRIPTION ·High DC Current Gain- : hFE = 400(Min)@ IC= 10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 150V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.
5V(Max)@ IC= 10A = 4.
0V(Max)@ IC= 15A ·Complement to Type MJH11017 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifiers ,low frequency switching and motor control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 150 VCEO Collector-Emitter Voltage 150 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 15 ICM Collector Current-Peak 30 IB Base Current- Continuous 0.
5 PC Collector Power Dissipation @TC=25℃ 150 Tj Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.
83 ℃/W isc Website:www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A ,IB= 0.
1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A ,IB= 0.
15A VBE(sat) Base-Emitter Saturation Voltage IC= 15A ,IB= 0.
15A VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current ICEO Collector Cutoff Current IC= 10A ; VCE= 5V VCBO=150V,IE=0 ; VCBO=150V,IE=0 ;TC=150℃ VCE= 150V, IB=0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 10A ; VCE= -5V hFE-2 DC Current Gain IC= 15A ; VCE= -5V MJH11018 MIN TYP.
MAX UNIT 150 V 2.
5 V 4.
0 V 3.
8 V 2.
8 V 0.
5 5.
0 mA 1 mA 2 mA 400 15000 100 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)