DatasheetsPDF.com

MJH11017

Inchange Semiconductor
Part Number MJH11017
Manufacturer Inchange Semiconductor
Description Silicon PNP Darlington Power Transistor
Published Aug 10, 2016
Detailed Description isc Silicon PNP Darlington Power Transistor MJH11017 DESCRIPTION ·High DC Current Gain- : hFE = 400(Min)@ IC= -10A ·Co...
Datasheet PDF File MJH11017 PDF File

MJH11017
MJH11017

Overview
isc Silicon PNP Darlington Power Transistor MJH11017 DESCRIPTION ·High DC Current Gain- : hFE = 400(Min)@ IC= -10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -150V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.
5V(Max)@ IC= -10A = -4.
0V(Max)@ IC= -15A ·Complement to Type MJH11018 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifiers ,low frequency switching and motor control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak -30 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -0.
5 A 150 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.
83 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -10A ,IB= -0.
1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -15A ,IB= -0.
15A VBE(sat) Base-Emitter Saturation Voltage IC= -15A ,IB= -0.
15A VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current ICEO Collector Cutoff Current IC= -10A ; VCE= -5V VCB=150V; IE=0 VCB=150V; IE=0;TC=150℃ VCE= -150V, IB=0 IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE-1 DC Current Gain IC= -10A ; VCE= -5V hFE-2 DC Current Gain IC= -15A ; VCE= -5V COB Output Capacitance Switching times td Delay Time tr Rise Time ts Storage Time tf Fall Time IE= 0 ; VCB= -10V,f= 0.
1MHz IC= -10A , VCC= -100V; IB= -0.
1A; VBE(...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)