isc Silicon
NPN RF
Transistor
DESCRIPTION ·With SOT-363 packaging ·Low voltage use ·Ultra super mini mold package ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in low noise and small signal amplifiers
from VHF band to UHF band
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
20
UNIT V
VCEO
Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
2.
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Max.
Junction Temperature
100
mA
150
mW
150
℃
Tstg
Storage Temperature Range
-60~150
℃
UPA801T
isc website:www.
iscsemi.
cn
1 isc & isc...