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UPA801T

Part Number	UPA801T
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 9, 2020
Detailed Description	isc Silicon NPN RF Transistor DESCRIPTION ·With SOT-363 packaging ·Low voltage use ·Ultra super mini mold package ·Mini...
Datasheet	UPA801T PDF File

Overview

isc Silicon NPN RF Transistor DESCRIPTION ·With SOT-363 packaging ·Low voltage use ·Ultra super mini mold package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise and small signal amplifiers from VHF band to UHF band ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 20 UNIT V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 2.
5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Max.
Junction Temperature 100 mA 150 mW 150 ℃ Tstg Storage Temperature Range -60~150 ℃ UPA801T isc website：www.
iscsemi.
cn 1 isc & isc...

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