2SB656

isc Silicon PNP Power Transistors 2SB656 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·High Power Dissipation- : PC= 125W(Max)@TC=25℃ ·Complement to Type 2SD676 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAX...