isc Silicon
PNP Darlington Power
Transistor
2SB677
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -40V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.
5V(Max)@ IC= -2A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching applications.
·Hammer drive, pulse motor drive applications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation ...