isc Silicon
PNP Power
Transistor
2SB1185
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min.
) ·Good Linearity of hFE ·Low Collector Saturation Voltage-
: VCE(sat)= -1.
0V(Max.
)@ IC= -2A ·Complement to Type 2SD1762 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃
PC Collect...