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2SB1227

Part Number 2SB1227
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 17, 2020
Detailed Description isc Silicon PNP Darlington Power Transistor 2SB1227 DESCRIPTION ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC...
Datasheet 2SB1227




Overview
isc Silicon PNP Darlington Power Transistor 2SB1227 DESCRIPTION ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -2.
5A) ·Large Current Capability and Wide ASO.
·Complement to Type 2SD1829 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in control of motor drivers, printer hammer drivers, and constant-voltage regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector...






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