isc Silicon
PNP Darlington Power
Transistor
2SB1286
DESCRIPTION ·High DC Current Gain-
:hFE = 1000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage-
:V(BR)CEO = -100V(Min) ·Low Collector-Emitter Saturation Voltage
:VCE(sat) = -1.
5V(Max)@ IC= -1A ·Complement to Type 2SD1646 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-8
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Curren...