isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage-
: VCE(sat)= 0.
5V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for DC-DC converter, emergency lighting
inverter and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
15
V
IC
Collector Current-Continuous
15
A
ICP
Collector Current-Peak
25
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction...