isc Silicon
NPN Power
Transistor
BUV23
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 0.
8V (Max.
) @IC= 8A ·High Switching Speed ·High DC Current Gain-
: hFE= 15(Min.
) @IC= 8A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high current, high speed, high power
applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO VCER VCEX VCEO
Collector-Base Voltage
Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage VBE= -1.
5V
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
PC
Collector Power Dissipatio...