isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
15
A
120
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC2659
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