isc Silicon
NPN Power
Transistor
DESCRIPTION ·Good Linearity of hFE ·High Switching Speed ·Low Collector Saturation Voltage ·Complement to Type 2SA1471 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Inductance, lamp drivers ·Inverters, converters ·Power amplifiers ·High-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Pulse
Collector Power Dissipation
@TC=25℃ PC
Collector Power Dissipation
@Ta=25℃
TJ
Junction Temperature...