isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Breakdown Voltage and High Reliability ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching
regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
1100
V
VCEO Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
1.
5
A
ICM
Collector Current-Pulse
5
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
0.
8
A
25
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
...