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2SC4110

NPN Transistor

Description

isc Silicon NPN Power Transistor 2SC4110 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATING...

INCHANGE

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