isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCES
Collector-Emitter Voltage
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Pulse
22
A
IB
Base Current-Continuous
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipati...