isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Breakdown Voltage-
: V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection
output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
ICP
Collector Current-Peak
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
25
A
3.
0 W
70
...