isc Silicon
NPN Power
Transistor
2SD325
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 35V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
0V(Max) @IC= 1.
5A ·Complement to Type 2SB511 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
·Recommended for 5 watts AF power amplifier output use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
35
V
VCEO
Collector-Emitter Voltage
35
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.
5
A
ICM
Collector Current-Peak
Collector Power Dissipati...