isc Silicon
NPN Power
Transistor
2SD330
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
0V(Max) @IC= 2.
0A ·Complement to Type 2SB514 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Especially suited for use in output stage of 10W AF power
amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ T...