isc Silicon
NPN Power
Transistor
DESCRIPTION ·Continuous Collector Current-IC= 1A ·Power Dissipation-PD=30W @TC= 25℃ ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
1.
0
A
PC
Collector Power Dissipation@TC=25℃
30
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
2SD546
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless ot...