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2SD5011

Inchange Semiconductor
Part Number 2SD5011
Manufacturer Inchange Semiconductor
Title Power Transistor
Description ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Dampe...
Features ector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A ;IB= 0.8...
Published Sep 22, 2009
Datasheet PDF File 2SD5011 PDF File


2SD5011
2SD5011


Features
ector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A ;IB= 0.8A 1.5 V IEBO Emitter Cutoff Current VEB= 4V; IC=0 40 130 mA ICBO Collector-Base Cutoff Current VCB=800V; IE= 0 10 uA ...



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