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2SD5070

Inchange Semiconductor
Part Number 2SD5070
Manufacturer Inchange Semiconductor
Title Power Transistor
Description ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper ...
Features age IC= 2A; IB= 0.6A B 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A B 1.5 V ICBO Collector ...
Published Sep 22, 2009
Datasheet PDF File 2SD5070 PDF File


2SD5070
2SD5070


Features
age IC= 2A; IB= 0.6A B 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A B 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 40 200 mA hFE DC Current Gain IC= 0...



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