DatasheetsPDF.com

2SD5070

Inchange Semiconductor
Part Number 2SD5070
Manufacturer Inchange Semiconductor
Description Power Transistor
Published Sep 22, 2009
Detailed Description www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5070 DESCR...
Datasheet PDF File 2SD5070 PDF File

2SD5070
2SD5070

Overview
www.
DataSheet4U.
com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5070 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i .
w VALUE UNIT 1500 V 800 V 6 V 2.
5 A 10 A 50 W n c .
i m e IC Collector Current- Continuous ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.
iscsemi.
cn www.
DataSheet4U.
com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD5070 TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.
6A B 8.
0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.
6A B 1.
5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 40 200 mA hFE DC Current Gain IC= 0.
5A; VCE= 5V VECF C-E Diode Forward Voltage fT Current-Gain—Bandwidth Product tf Fall Time w ww s c s .
i IF= 2.
5A IC= 0.
5A; VCE= 10V IC= 2A, IB1= 0.
6A; IB2= -1.
2A RL= 100Ω; VCC= 200V n c .
i m e 8 2.
0 V 3 MHz 0.
4 μs isc Website：www.
iscsemi.
cn 2 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)