isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.
) ·Complement to Type 2SB681 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For AF power amplifier applications.
·Recommended for use in output stage of 80 watts power
amplifier .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
IE
Emitter Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
12
A
100
W
150
...