isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·Collector–Emitter Breakdown Voltage-
: V(BR)CEO = 80V(Min.
) ·DC Current Gain-
: hFE = 2000(Min) @ IC= 1A ·Low Collector Saturation Voltage ·Complement to Type 2SB795 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·They are suitable for use to operate from IC without
predriver, such as hammer driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
1.
5
A
ICM
Collector Current-Pulse
3.
0
A
IB
Base Current
Collector Powe...