isc Silicon
NPN Power
Transistor
2SD1705
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage-
: VCE(sat)= 0.
5V(Max.
)@ IC= 6A ·Complement to Type 2SB1154 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
130
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
ICP
Collector Current-Pulse
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃
T...