isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.
) ·Complement to Type 2SB1192 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications.
·TV vertical deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
200
V
VCEO Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
1
A
ICM
Collector Current-Peak
Total Power Dissipation @ TC=25℃
PC Total Power Dissipation @ Ta=25℃
TJ
Junction Temperature
2
A
25 W
2
150
℃
...