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BD303

Part Number BD303
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 22, 2020
Detailed Description isc Silicon NPN Power Transistor BD303 DESCRIPTION ·DC Current Gain - : hFE = 30(Min.)@ IC= 2A ·Collector-Emitter Brea...
Datasheet BD303




Overview
isc Silicon NPN Power Transistor BD303 DESCRIPTION ·DC Current Gain - : hFE = 30(Min.
)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.
) ·Complement to Type BD304 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages up to 25W, vertical deflection circuits in color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25...






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