isc Silicon
NPN Power
Transistor
BD311
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.
)@IC = 5A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
0 V(Max)@ IC = 5A ·Complement to Type BD312 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high quality amplifiers operating up to 60 watts
into 4 ohm load.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
4
A
PC
Collector...