isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·High DC Current Gain
: hFE= 750(Min) @IC= 3A ·Collector Power Dissipation-
: PC= 70W@ TC= 25℃ ·8 A Continuous Collector Current ·Complement to Type BD902 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as complementary AF push-pull output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
100
VCEO
Collector-Emitter Voltage
100
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
8
IB
Base Current-Continuous
0.
3
Collector Power Diss...