isc Silicon
PNP Darlington Power
Transistor
BD902
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·High DC Current Gain
: hFE= 750(Min) @IC= -3A ·Collector Power Dissipation-
: PC= 70W@ TC= 25℃ ·8 A Continuous Collector Current ·Complement to Type BD901 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as complementary AF push-pull output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-100
VCEO
Collector-Emitter Voltage
-100
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-8
IB
Base Current-Continuous
-0.
3
Collec...