isc Silicon
PNP Darlington Power
Transistor
BDW64/A/B/C/D
DESCRIPTION ·Collector Current -IC= -6A ·High DC Current Gain-hFE= 750(Min.
)@ IC= -2A ·Complement to Type BDW63/A/B/C/D ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDW64
-45
VCBO
Collector-Base Voltage
BDW64A
-60
BDW64B
-80
V
BDW64C
-100
BDW64D
-120
BDW64
-45
BDW64A
-60
VCEO
Collector-Emitter Voltage
BDW64B
-80
V
BDW64C
-100
BDW64D
-120
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
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