DatasheetsPDF.com

BDW63B

INCHANGE
Part Number BDW63B
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 22, 2020
Detailed Description isc Silicon NPN Darlington Power Transistor BDW63/A/B/C/D DESCRIPTION ·Collector Current -IC= 6A ·High DC Current Gain...
Datasheet PDF File BDW63B PDF File

BDW63B
BDW63B


Overview
isc Silicon NPN Darlington Power Transistor BDW63/A/B/C/D DESCRIPTION ·Collector Current -IC= 6A ·High DC Current Gain-hFE= 750(Min.
)@ IC= 2A ·Complement to Type BDW64/A/B/C/D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW63 45 VCBO Collector-Base Voltage BDW63A 60 BDW63B 80 V BDW63C 100 BDW63D 120 BDW63 45 BDW63A 60 VCEO Collector-Emitter Voltage BDW63B 80 V BDW63C 100 BDW63D 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Current-Continuous Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
1 A 2 W 60 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-c Thermal Resistance, Junction to Case MAX 2.
08 62.
5 UNIT ℃/W ℃/W isc website:www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDW63/A/B/C/D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS BDW63 V(BR)CEO Collector-Emitter Breakdown Voltage BDW63A BDW63B IC= 30mA; IB=0 BDW63C BDW63D VCE(sat)-1 VCE(sat)-2 Collector-Emitter Voltage Collector-Emitter Voltage Saturation IC= 2A; IB= 12mA Saturation IC= 6A; IB= 60mA VBE(on) VECF Base-Emitter On Voltage C-E Diode Forward Voltage IC= 2A; VCE= 3V IF= 6A BDW63 VCE= 30V; IB= 0 ICEO Collector Current Cutoff BDW63A BDW63B VCE= 30V; IB= 0 VCE= 40V; IB= 0 BDW63C VCE= 50V; IB= 0 ICBO Collector Current BDW63D VCE= 60V; IB= 0 BDW63 VCB= 45V; IE= 0 VCB= 45V; IE= 0; TJ= 150℃ BDW63A VCB= 60V; IE= 0 VCB= 60V; IE= 0; TJ= 150℃ Cutoff BDW63B VCB= 80V; IE= 0 VCB= 80V; IE= 0; TJ= 150℃ BDW63C VCB= 100V; IE= 0 VCB= 100V; IE= 0; TJ= 150℃ B...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)