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BDW63C

INCHANGE
Part Number BDW63C
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 22, 2020
Detailed Description isc Silicon NPN Darlington Power Transistor BDW63/A/B/C/D DESCRIPTION ·Collector Current -IC= 6A ·High DC Current Gain...
Datasheet PDF File BDW63C PDF File

BDW63C
BDW63C

Overview
isc Silicon NPN Darlington Power Transistor BDW63/A/B/C/D DESCRIPTION ·Collector Current -IC= 6A ·High DC Current Gain-hFE= 750(Min.
)@ IC= 2A ·Complement to Type BDW64/A/B/C/D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW63 45 VCBO Collector-Base Voltage BDW63A 60 BDW63B 80 V BDW63C 100 BDW63D 120 BDW63 45 BDW63A 60 VCEO Collector-Emitter Voltage BDW63B 80 V BDW63C 100 BDW63D 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Current-Continuous Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
1 A 2 W 60 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-c Ther...


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