isc Silicon
NPN Power
Transistor
BDY39
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=25-100@IC = 4A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.
7V(Max)@ IC = 4A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high power AF output stages and in
stabilized power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCER
Collector-Emitter Voltage
70
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
22.
5
A
IB
Base Current
7
A
PC
C...