isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·LF signal power amplification.
·High current fast switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector- Base Voltage
120
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
25
A
IB
Base Current-Continuous
6
A
PC
Collector Power Dissipation @TC=25℃ 175
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature Range
-65~2...