isc Silicon
NPN Power
Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 30-120@IC= 5A ·Excellent Safe Operating Area ·High Current Capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in switching-control amplifiers, power
gates,switching
regulators, converters, and inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
120
V
VCEO Collector-Emitter Voltage
100
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC≤25℃
TJ
Junction Temperat...