isc Silicon
NPN Power
Transistor
BU546
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 550V(Min.
) ·High Speed Switching ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in switching mode power supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1300
V
VCEO
Collector-Emitter Voltage
550
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
2
A
100
W
150
℃
Tstg
Storage ...