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BU500

INCHANGE
Part Number BU500
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 23, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage-VCEX= 1500V(Min.) ·Low Collector Saturation Voltage- : VCE(s...
Datasheet PDF File BU500 PDF File

BU500
BU500

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage-VCEX= 1500V(Min.
) ·Low Collector Saturation Voltage- : VCE(sat)= 1.
0V(Max.
)@ IC= 4.
5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCEX Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 16 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 4 A 75 W 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.
66 ℃/W BU500 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERIS...


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