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BU505

NXP
Part Number BU505
Manufacturer NXP
Description Silicon diffused power transistors
Published Apr 17, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BU505; BU505D Silicon diffused power transistors Product specification Supersedes da...
Datasheet PDF File BU505 PDF File

BU505
BU505

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BU505; BU505D Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed switching NPN power transistor in a TO-220AB package.
The BU505D has an integrated efficiency diode.
2 BU505; BU505D 2 APPLICATIONS • Horizontal deflection circuits of colour television receivers.
PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter MBK106 1 MBB008 1 3 MBB077 3 1 2 3 a.
BU505.
b.
BU505D.
Fig.
1 Simplified outline (TO-220AB) and symbols.
QUICK REFERENCE DATA SYMBOL VCESM VCEO VCEsat VF ICsat IC ICM Ptot tf PARAMETER collector-emitter peak voltage collector-emitter voltage collector-emitter saturation voltage diode forward voltage (BU505D) collector saturation current collector current (DC) collector current (peak value) total power dissipation fall time see Fig.
3 see Fig.
3 Tmb ≤ 25 °C; see Fig.
4 inductive load; see Fig.
7 VBE = 0 open base IC = 2 A; IB = 900 mA IF = 2 A CONDITIONS − − − − − − − − 0.
9 TYP.
MAX.
1500 700 1 1.
8 2 2.
5 4 75 − V V V V A A A W µs UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1.
67 UNIT K/W 1997 Aug 13 2 Philips Semiconductors Product specification Silicon diffused power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCESM VCEO ICsat IC ICM IB IBM Ptot Tstg Tj PARAMETER collector-emitter peak voltage collector-emitter voltage collector saturation current collector current (DC) collector current (peak value) base current (DC) base current (peak value) total power dissipation storage temperature junction temperature Tmb ≤ 25 °C; see Fig.
4 see Fig.
3 see Fig.
3 VBE = 0 open base CONDITIONS BU505; BU505D MIN.
− − − − − − − − −65 − MAX.
1500 700 2 2.
5 4 2 4 75 +150 ...


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