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BU505


Part Number BU505
Manufacturer NXP
Title Silicon diffused power transistors
Description High-voltage, high-speed switching NPN power transistor in a TO-220AB package. The BU505D has an integrated efficiency diode. 2 BU505; BU505D 2 ...
Features power dissipation fall time see Fig.3 see Fig.3 Tmb ≤ 25 °C; see Fig.4 inductive load; see Fig.7 VBE = 0 open base IC = 2 A; IB = 900 mA IF = 2 A CONDITIONS − − − − − − − − 0.9 TYP. MAX. 1500 700 1 1.8 2 2.5 4 75 − V V V V A A A W µs UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal r...

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BU500 : ·High Voltage-VCEX= 1500V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 4.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCEX Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 16 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 4 A 75 W 150 ℃ Tstg Storage Temperature.

BU500 : .

BU500 : SILICON NPN TRIPLE DIFFUSED MESA TYPE BU500 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES . High Voltage : V CES =1500V . Low Saturation Voltage : V CE ( sat )=lV (Max.) • Fall Time : tf=0.7/is (Typ.) . Glass Passivated Base-Collector Junction. Unit in mm m025OMAX. 02 1.0 MAX + 0.09 01.0-0.03 3 0.2 ±0.2 MAXIMUM RATINGS (Tc=25°c) CHARACTERISTIC Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak Base Current (Peak) Total Power Dissipation (Tc=95°C) Junction Temperature Storage Temperature Range Thermal Resistance SYMBOL V CES v EBO IC X CM IBM L stg R th(j-c) RATING 1500 7.5 12.5 +115 -65-115 1.6 UNIT V °C/W 1. BASE 2. EMITTER COLLECTOR (CASE).

BU500 : ·With TO-3 package ·Low collector saturation voltage APPLICATIONS ·Designed for use in large screen color deflection circuits. PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 5 6 16 4 75 -65~150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance jun.

BU5027A : Shenzhen Jingdao Electronic Co.,Ltd. TEL:0755-29799516 FAX:0755-29799515 Http://www.jdsemi.cn BU5027A * : : * : NPN 。 、、。 B C E : :( Tc=25 ℃ ) ≥ 800 ≥ 1100 ≥9 2.7 45 150 - 55 ~ 150 V V V A W ℃ ℃ - - - BVCEO BVCBO BVEBO Icm Pcm Tjm Tstg : : ( Tc=25 ℃ ) - - - - - - BVCEO BVCBO BVEBO ICEO ICBO IEBO IC=1mA; IC=1mA; IE=1mA; VCE=750V; IB=0 IE=0 IC=0 I B=0 800 1100 9 20 10 10 15 8 0.6 0.5 4 35 V V V uA uA uA VCB=1050V ; I E=0 VEB=7V; VCE=5V; IC=0 IC=0.2A IC=1mA IB=1A HFE VCE=5V; IC=2A; - VCE (sat) tf fT V uS MHz IC=1A;I B1=IB2=0.2A;VCE=300V VCE=10V;I C=0.1A; f =1MHz Jingdao Electronic Corporation V01 1/3 Shenzhen Jingdao Electronic Co.,Ltd. .

BU5027AF : R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. BU5027AF Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1.APPLICATION Computer aided power and Switch-mode power supplies 2.FEATURES High voltage capability Features of good high temperature High switching speed 3.PACKAGE TO-220F 4.Electrical Characteristics 4.1 Absolute Maximum Ratings 1 23 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER SYMBOL C.

BU5027S : R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. BU5027S Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1.APPLICATION Computer aided power and Switch-mode power supplies 2.FEATURES High voltage capability Features of good high temperature High switching speed 3.PACKAGE TO-220 4.Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER SYMBOL Collec.

BU505 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V(Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage-VBE=0 1350 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2.5 A ICM Collector Current-Peak 4 A IB Base Current-Continuous 2 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 75 W 150 ℃ Tstg Storage Temperature R.

BU505 : The BU505 is a High Voltage NPN fastswitching transistor designed to be used in lighting application, like electronic ballast for fluorescent lamps. It’s characteristics make also ideal for power supplies. 3 2 1 TO-220 Internal Schematic Diagram Order Codes Part Number BU505 Marking BU505 Package TO-220 Packing TUBE August 2005 rev.4 1/10 www.st.com 10 1 Absolute Maximum Ratings 1 Absolute Maximum Ratings Table 1. Absolute Maximum Rating Symbol Parameter VCES VCEO IC ICM IB IBM PTOT TSTG TJ Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Collector Current Collector Peak Current (tP 5ms) Base Current Base Peak Current (tP 5ms) Total dissipation at Tc =.

BU505 : ·With TO-220C package ·High voltage,high speed-switching APPLICATIONS ·For horizontal deflection circuits of color TV receivers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (peak) Base current Base current(peak) Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 5 2.5 4 1 2 75 150 -65~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Ther.

BU505D : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V(Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage-VBE=0 1350 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2.5 A ICM Collector Current-Peak 4 A IB Base Current-Continuous 2 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 75 W 150 ℃ Tstg Storage Temperature R.

BU505D : High-voltage, high-speed switching NPN power transistor in a TO-220AB package. The BU505D has an integrated efficiency diode. 2 BU505; BU505D 2 APPLICATIONS • Horizontal deflection circuits of colour television receivers. PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter MBK106 1 MBB008 1 3 MBB077 3 1 2 3 a. BU505. b. BU505D. Fig.1 Simplified outline (TO-220AB) and symbols. QUICK REFERENCE DATA SYMBOL VCESM VCEO VCEsat VF ICsat IC ICM Ptot tf PARAMETER collector-emitter peak voltage collector-emitter voltage collector-emitter saturation voltage diode forward voltage (BU505D) collector saturation current collector current (DC) collector current (peak.

BU505DF : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V(Min.) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage-VBE=0 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2.5 A ICM Collector Current-Peak 4 A IB Base Current-Continuous 2 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 20 W 150 ℃ Tstg.

BU505DF : High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. The BU505DF has an integrated efficiency diode. APPLICATIONS • Horizontal deflection circuits of colour television receivers. PINNING 1 2 3 MBC668 BU505F; BU505DF 2 2 1 MBB008 1 3 MBB077 3 a. BU505F. DESCRIPTION b. BU505DF. PIN 1 2 3 mb base Front view collector emitter mounting base; electrically isolated from all pins Fig.1 Simplified outline (SOT186) and symbols. QUICK REFERENCE DATA SYMBOL VCESM VCEO VCEsat VF ICsat IC ICM Ptot tf PARAMETER collector-emitter peak voltage collector-emitter voltage collector-emitter saturation voltage diode forward volta.

BU505DF : ·With TO-220Fa package ·High voltage,high speed ·Built-in damper diode. APPLICATIONS ·For horizontal deflection circuits of color TV receivers. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (peak) Base current Base current(peak) Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 5 2.5 4 2 4 20 150 -65~150 UNIT V V V A A A A W THERMAL CHARACTERIST.

BU505F : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V(Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage-VBE=0 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2.5 A ICM Collector Current-Peak 4 A IB Base Current-Continuous 2 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 20 W 150 ℃ Tstg Storage Temperature R.




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