isc Silicon
NPN Power
Transistor
BUV70
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 600V (Min) ·High Power Dissipation ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for motor controls, switching mode power
supplies applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCES
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
IBM
Base Current-peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALU...