isc Silicon
NPN Power
Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·The device employs the popular TO-66 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·High voltage high current power
transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC PC TJ Tstg
Collector-Base Voltage
500
V
Collector-Emitter Voltage
400
V
Emitter-Base Voltage
7
V
Collector Current-Continuous
3
A
Collector Power Dissipation@TC=25℃
70
W
Junction Temperature
150
℃
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
...