2SB550

2SB550 : ·With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplification ·For low speed and power switching PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -100 -70 -5 -5 25 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERIST.

2SB551 : ·With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -50 -50 -5 -3 25 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise .

2SB551 : ·Low Collector Saturation Voltage- : VCE(sat)= -1.2V(Typ.)@IC= -2A ·High Power Dissipation- : PC= 25W(Max)@TC=55℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous PC Collector Power Dissipation @TC= 25℃ TJ Junction Temperature -3 A 25 W 150 ℃ Tstg Storage Temperature -45~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Po.

2SB552 : SILICON PNP TRIPLE DIFFUSED TYPE HGIH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. REGULATOR APPLICATIONS. FEATURES • High Collector Power Dissipation • High Collector Current : I C=-15A • High Voltage : VCEO=-180V • Complementary to 2SD552. P C=150W (Tc=25°C) INDUSTRIAL APPLICATIONS Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation SYMBOL v CBO VCEO VEBO ic IB RATING -220 180 -5 -15 -3 150 UNIT 1. BASE 2. EMITTER COLLECTOR (CASE) Junction Temperature Storage Temperature Range Tj Tstt 150 -65^150 TOSHI.

2SB552 : ·With TO-3 package ·Complement to type 2SD552 APPLICATIONS ·Power amplifier applications ·Power switching applications ·DC-DC converters PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -220 -180 -5 -15 -4 150 150 -55~200 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Trans.

2SB552 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·High Power Dissipation- : PC= 150W(Max)@TC=25℃ ·Complement to Type 2SD552 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplifier applications. ·High power switching applications. ·DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -220 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -3 A 150 W 150 ℃ Tstg .

2SB553 : : SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 10.3 MAX. 3.6 ±0.2 FEATURES • Low Collector Saturation Voltage : VcE(sat)=-0.4V (Max.) at Ic=-4A • Complementray to 2SD553. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Ta=25°C Dissipation Tc=25°C Junction Temperature Storage Temperature Range VCBO VCEO v EBO ic Tstg -70 -50 -5 -7 1.5 40 150 -55^150 V °C °C 1. BASE 2. COLLECTOR (HEAT SINK; 3. EMITTER JEDEC EIAJ TOSHIBA TO-220AB SC— 46 2— 10A1A ELECTRICAL .

2SB553 : ·With TO-220C package ·Complement to type 2SD553 ·Low collector saturation voltage APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -50~150 Open emitter Open base Open collector CONDITIONS VALUE -70 -50 -5 -7 1.5 W UNIT V V V A SavantIC Semiconductor www.DataSheet4U.com Product Specific.

2SB553 : ·Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -4A ·Complement to Type 2SD553 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications. ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -7 A 1.5 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB553 isc website：www.iscsemi.com 1 isc & iscsemi is registe.

2SB554 : : SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm POWER AMPLIFIER APPLICATIONS, FEATURES • High Power Dissipation • High Breakdown Voltage : P c = 150W VcEO = -180V • Complementary tc/2SD424. • Recommended for 100W High-Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (T a?=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage SYMBOL v CBO v CF0 Emitter-Base Voltage Collector Current VE750 ic Emitter Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range If PC T-i Tstg RATING -180 -180 -5 -15 15 150 UNIT V V V A A W 15 °C -65 %150 °C 1. BASE Z. EMITTER COLLECTOR (CASE) TO-3 TOSHIBA TC-3, TB-3 2-21A1A.

2SB554 : ·With TO-3 package ·Complement to type 2SD424 ·High power dissipation APPLICATIONS ·For use in power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -180 -180 -5 -15 -4 150 150 -55~200 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARAC.

2SB554 : ·High Power Dissipation- : PC= 150W@TC= 25℃ ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Complement to Type 2SD424 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier ,DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous 1.5 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB554 isc.

2SB555 : ·With TO-3 package ·Complement to type 2SD425/426 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2SB555 VCBO Collector-base voltage 2SB556 2SB555 VCEO Collector-emitter voltage 2SB556 VEBO IC IE PC Tj Tstg Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -120 -5 -12 12 100 150 -65~150 V A A W Open emitter -120 -140 V CONDITIONS VALUE -.

2SB555 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·High Power Dissipation- : PC= 80W(Max)@TC=25℃ ·Complement to Type 2SD425 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 80W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -12 A 80 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SB5.

2SB556 : ·With TO-3 package ·Complement to type 2SD425/426 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2SB555 VCBO Collector-base voltage 2SB556 2SB555 VCEO Collector-emitter voltage 2SB556 VEBO IC IE PC Tj Tstg Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -120 -5 -12 12 100 150 -65~150 V A A W Open emitter -120 -140 V CONDITIONS VALUE -.

2SB556 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High Power Dissipation- : PC= 100W(Max)@TC=25℃ ·Complement to Type 2SD426 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 80W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -12 A 100 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2S.