2SB604

2SB600 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·High Power Dissipation- : PC= 200W(Max)@TC=25℃ ·Complement to Type 2SD555 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Pulse PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -15 A 200 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SB600 isc website：www.iscsemi.com.

2SB600 : ·With TO-3 package ·High power dissipations ·Complement to type 2SD555 APPLICATIONS ·For use in audio and power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -200 -200 -5 -10 200 150 -55~200 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS .

2SB601 : ·High DC Current Gain- : hFE = 2000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low-frequency power amplifiers and low- speed switching applications. ·Ideal for use in direct drive from IC output for magnet drivers such as terminal equipment or cash registers. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Conti.

2SB601 : of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks o.

2SB601 : ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For low-frequency power amplifier and low-speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SB601 Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-Pulse Base current-DC TC=25 PT Total power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.5 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -7 -5 -8 -0.5 30 W UNIT V V V A A A SavantIC Semiconductor w.

2SB605 : .

2SB608 : ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -180V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.) @IC= -0.5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -5 A PC Collector Power Dissipation@TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com.

2SB609 : ·With TO-66 package ·Wide area of safe operation APPLICATIONS ·For use in audio frequency power amplifier application PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -100 -80 -5 -4 40 150 -40~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherw.

2SB609 : ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -80V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.) @IC= -2A ·Wide area of safe operation ·With TO-66 package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -6 A PC Collector Power Dissipation@TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature .