2SB626

2SB621 : Transistor 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD592 and 2SD592A 5.0±0.2 Unit: mm 4.0±0.2 q q Low collector to emitter saturation voltage VCE(sat). High transition frequency fT. (Ta=25˚C) Ratings –30 –60 –25 –50 –5 –1.5 –1 750 150 –55 ~ +150 Unit V s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB621 2SB621A 2SB621 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol 13.5±0.5 5.1±0.2 s Features 0.45 –0.1 +0.2 0.45 –0.1 1.27 +0.2 emitter voltage 2SB621A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A A.

2SB621A : Transistor 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD592 and 2SD592A 5.0±0.2 Unit: mm 4.0±0.2 q q Low collector to emitter saturation voltage VCE(sat). High transition frequency fT. (Ta=25˚C) Ratings –30 –60 –25 –50 –5 –1.5 –1 750 150 –55 ~ +150 Unit V s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB621 2SB621A 2SB621 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol 13.5±0.5 5.1±0.2 s Features 0.45 –0.1 +0.2 0.45 –0.1 1.27 +0.2 emitter voltage 2SB621A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A A.

2SB624 : .

2SB624 : Production specification Silicon Epitaxial Planar Transistor FEATURES  High DC current gain.hFE: 200TYP (VCE=-1.0V,IC=-100mA)  Complimentary to the 2SD596. Pb Lead-free 2SB624 APPLICATIONS  Audio frequency amplifier.  Switching appilication. ORDERING INFORMATION Type No. Marking 2SB624 BV1/BV2/BV3/BV4/BV5 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -30 VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage -25 -5 IC Collector Current -Continuous -700 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ C014 Rev.A www.gmesem.

2SB624 : ·SOT-23 plastic-encapsulate transistors ·High DC current gain:hFE=200(TYP) @VCE = -1V, IC = -100mA ·Complementary to 2SD596 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency general purpose amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.7 A 0.2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc .

2SB624 : Elektronische Bauelemente 2SB624 -0.7A , -30V PNP Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  High DC Current Gain. hFE：200 (Typ.) (VCE= -1V, IC= -100mA)  Complimentary to 2SD596 MARKING Product-Rank 2SB624-BV1 2SB624-BV2 2SB624-BV3 Range 110~180 135~220 170~270 Product-Rank 2SB624-BV4 2SB624-BV5 Range 200~320 250~400 PACKAGE INFORMATION Package MPQ SOT-23 3K LeaderSize 7’ inch SOT-23 A L 3 Top View CB 12 KE 3 1 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.80 2.25 1.20 3.00 2.55 1.40 0.90 1.15 1.80 2.00 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.1.

2SB624 : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR (PNP) FEATURES z High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) z Complimentary to 2SD596. SOT-23 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -700 mA PD Total Device Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-bas.

2SB624 : Transys Electronics LIMITED SOT-23-3L Plastic-Encapsulated Transistors 2SB624 TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.7 Collector-base voltage A V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 2. 80¡ À0. 05 1. 60¡ À0. 05 1. 9 0. 95¡ À0. 025 1. 02 0. 35 2. 92¡ À0. 05 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage .

2SB624 : PNP Epitaxial Planar Transistors P b Lead(Pb)-Free ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PD Tj Tstg 2SB624 3 2 1 SC-59 Limits -30 -25 -5 -700 200 150 -55 to +150 Unit V V V A mW ˚C ˚C ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted) Parameter Collector-Base Breakdown Voltage IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage IC=-1mA, IB=0 Emitter-Base Breakdown Voltage IE=-100µA, IC=0 Collector Cutoff Current VCB=-30V, IE=0 Emitter Cutoff Current VEB=-5V, IE=0 Symbol Min Typ Max Unit .

2SB624-HF : SMD Type PNP Transistors 2SB624-HF Transistors ■ Features ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596-HF. ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ 0-0.1 +0.10.38 -0.1 1.Base 2.Emitter 3.collector Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature range Symbol VCBO VCEO VEBO IC PC TJ Tstg Ratin.

2SB625 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.) @IC= -5A ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @Tc=25℃ TJ Junction Temperature Tstg Storage Temperature -5 A 60 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 i.

2SB628 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Complement to Type 2SD608 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak -3.0 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.3 A 1.5 W 20 150 ℃ Tstg .

2SB628 : ·With TO-220C package ·High VCEO APPLICATIONS ·Low frequency power amplifier color TV vertical deflection output PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -5 -1.5 20 150 -45~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Coll.