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2SB624

JCET
Part Number 2SB624
Manufacturer JCET
Description PNP Transistor
Published Jul 15, 2017
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR (PNP) FEATU...
Datasheet PDF File 2SB624 PDF File

2SB624
2SB624

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR (PNP) FEATURES z High DC current gain.
hFE:200 TYP.
(VCE=-1V,IC=-100mA) z Complimentary to 2SD596.
SOT-23 1.
BASE 2.
EMITTER 3.
COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -700 mA PD Total Device Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector Output Capacitance V(BR)CBO V(BR)CEO V(BR)EBO ICB...


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