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2SB625

Part Number	2SB625
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB625 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VC...
Datasheet	2SB625 PDF File

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB625 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.
0V(Max.
) @IC= -5A ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @Tc=25℃ TJ Junction Temperature Tstg Storage T...

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