| Part Number | 2SD1466 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) · Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 8A ·High D... |
| Features |
CS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 20mA ; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.1A
VCE(sat)-2 Collector-Emitter Saturation Vol...
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| File Size | 202.12KB |
| Datasheet |
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2SD1460 : :) SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH CURRENT SWITCHING APPLICATIONS. FEATURES . High Collector Current : Ic=30A . High DC Current Gain : hFE=1000(Min. (V C e=5V, Ic=20A) . Monolithic Construction with Built-in Base-Emitter Shunt Resistor. Unit in mm 025.OMAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage SYMBOL v CBO VCEO RATING 100 100 UNIT V Emitter-Base Voltage VEBO Collector Current ic 30 Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT IB PC L stg 200 150 -65-150 COLLECTOR 1. BASE 2. EMITTER COLLECTOR (CASE) TO-3 TOSHIBA TC-3 , TB-3 2-2.
2SD1468 : Elektronische Bauelemente 2SD1468 1A , 30V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low Saturation Voltage Ideal for Low Voltage, High Current Dribes High DC Current Gain and High Current CLASSIFICATION OF hFE Product-Rank 2SD1468-Q 2SD1468-R Range 120~270 180~390 2SD1468-S 270~560 TO-92 REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76 1 Emitter 2 Collector 3 Base Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Collector to Base V.
2SD1468S : Muting Transistor (15V, 1A) 2SD1468S Features 1) Low saturation voltage, typically VCE(sat) = 0.08V at Ic / IB = 500mA / 500A. 2) Ideal for low voltage, high current drives. 3) High DC current gain and high current. Dimensions (Unit : mm) SPT 4.0 3.0 2.0 (15Min.) 3Min. 0.45 2.5 5.0 (1) (2) (3) 0.5 0.45 (1)Emitter (2)Collector (3)Base Taping specifications Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO IC PC Tj Tstg Limits 30 15 5 1 0.3 150 −55 to +150 Unit V V V A W °C °C Electrical characteristics (Ta=.
2SD1468S : Elektronische Bauelemente 2SD1468S 1A , 30V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low Saturation Voltage Ideal for Voltage, High Current Drives. High DC Current Gain and High Current CLASSIFICATION OF hFE Product-Rank 2SD1468S-Q 2SD1468S-R 2SD1468S-S Range 120~270 180~390 270~560 TO-92S REF. A B C D E F G H J K L Millimeter Min. Max. 3.90 4.10 3.05 3.25 1.42 1.62 15.1 15.5 2.97 3.27 0.66 0.86 2.44 2.64 1.27 REF. 0.36 0.48 0.36 0.51 45° Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Vol.