isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IPP080N03L,IIPP080N03L
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤8.
0mΩ ·Enhancement mode:
Vth =1.
0 to 2.
2V (VDS = 0 V, ID=250μA) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
50
IDM
Drain Current-Single Pulsed
350
PD
Total Dissipation @TC=25℃
47
Tj
Max.
Operating Junction Temperature
175
Tstg
Storage Tempera...